The Tokyo-based Fujitsu Laboratories, a subsidiary of technology solution provider Fujitsu Corp, said it's developing the world's first gallium-nitride high electron mobility transistor (GaN HEMT), which aims to reduce the power consumption, as well as the size of power supplies. 

Laptop's adapter, for example, is notorious for the long coil and the bulky transformer. But with GaN HEMT, the size can be easily contracted by 90 percent, which is small enough to be a built-in part, according to Fujitsu. 

Gallium is 10 times stronger than silicon, the conventional material for semiconductor, with much lower energy consumption. The technology will be widely used in home appliances, especially air conditioners. 

As part of Fujitsu's Green Policy, the new transistor is expected to be introduced in 2011.